Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

In this work, a deliberate etching-based top-down approach is proposed to fabricate the GaN nanorod (NR) Schottky barrier diode (SBD). As key step during fabrication, impact of wet-etching process on device performance systematically studied. By virtue reduced surface states at sidewall, NR SBD with substantially improved, delivering forward turn-on voltage 0.65 V, current density ∼10 kA/cm2 3 an ideality factor 1.03, ON/OFF ratio ∼1010, and no severe collapse, along reverse breakdown 772 V.